Nimbus 300
Sputtering Deposition System
The Unique architecture of the Nimbus 300 allows it to achieve
the highest wafer throughput in the industry. Three vacuum
chambers enable three batches of wafers to be in the system
at any given time. One batch is being processed, one is being
sputter cleaned, and the third one is being loaded and unloaded
from the loadback.
Process Advantage
In the Nimbus 300, films are deposited sequentially. Up to
five magnetrons are mounted on a pentagonal drum capable of
rotating into each of the five positions. The batch of wafers
is moved under the magnetron several times during each step
ensuring high film uniformity.
- Three progressive vacuum stages isolate the process chamber
from wafer vapor and other gaseous contaminants.
- A separate etch chamber provides increased process purity
- An all dry pumping system ensures no contamination from
all backstreaming
The Nimbus 300 Linear architecture is particularly suitable
for the simultaneous deposition of more than one metal making
the Nimbus 300 the ideal choice for phase-in deposition. Key
applications include the Cr/Cu system for C4 Flip Chip technology
and other UBM (under bump metallurgy) Processess.
Linear Magnetron Technology
The linear/ planar magnetron technology used in the Nimbus
300 is a reliable , cost effective approach to sputter depostion
. The robust linear magnetron design has been field proven
for nearly 30 years in a broad range of demanding applications.
Specifications
Process
capability
- Sequential Deposition of up to 5 layers
- Phase-in deposition of binary metal systems
- RF sputter clean
- Optional soft etch
Throughput
- Sixty(60) 200mm wafers/hour
- Under Bump Metallurgy(UBM) for Flipchip, TAB bumping
- I/O redistribution
- Backside wafer metallization
Vacuum stages
- Process < 2x10-7 Torr
- Sputter clean < 5x10-7 Torr
- Loadlock < 1x10-1 Torr
Uniformity
- Single Wafer < 5% 3 Sigma
- Wafer to Wafer < 5% 3 Sigma
- GaAs and GaN applications
- Optoelectronics
Nimbus 300 Features
- 100 to 300 mm capability
- Multiple materials up to 5
- Rapid wafer size change
- Backside and thinned wafer capability
- Windows NT based controls
- Low cose ownership
- Small footprint
- Parallel processing
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